研究方向：

我们从密度泛函理论出发聚焦于真实材料的新奇物理性质。借助第一性原理计算方法开展新型量子材料的搜寻、拓扑材料和低维量子材料的物性研究、调制与功能化，此外也致力于发展新理论计算方法来揭示和理解新颖的物理现象。

代表论文：

• H. X. Fu, C.-X. Liu, B. Yan. Exchange Bias and Quantum Anomalous Hall Effect in the MnBi2Te4-CrI3 Heterostructure. Sci. Adv. 6(10), eaaz0948, 2020.
• S. Xu#, H. X. Fu#, Y. Tian, et al. Exploiting Two-Dimensional Bi2O2Se for Trace Oxygen Detection. Angew. Chem. Int. Ed. 2020.
• C. Guo#, X. Meng#, H. X. Fu#, et al. Probing nonequilibrium dynamics of photoexcited polarons on a metal-oxide surface with atomic precision. Phys. Rev. Lett. 124, 206801, 2020 (Editors’ Suggestion).
• H. X. Fu, J. Wu, H. Peng, and B. Yan. Self-modulation doping effect in the high-mobility layered semiconductor Bi2O2Se. Phys. Rev. B 97, 241203, 2018 (Rapid Communication).
• Y. Yu#, H. X. Fu#, L. She, et al. Fe on Sb(111): Potential Two-Dimensional Ferromagnetic Superstructures. ACS nano 11, 2143, 2017.
• H. X. Fu, Z. Liu, C. Lian, et al. Magnetic Dirac Fermions and Chern Insulator Supported on Pristine Silicon Surface. Phys. Rev. B 94, 035427, 2016.
• H. X. Fu, J. Ren, L. Chen, et al. Prediction of Silicon-based Room Temperature Quantum Spin Hall Insulator via Orbital Mixing. Europhys. Lett. 113, 67003, 2016.
• H. X. Fu, L. Chen, J. Chen, et al. Multilayered Silicene: The Bottom-Up Approach for a Weakly Relaxed Si(111) with Dirac Surface States. Nanoscale 7, 15880, 2015.
• H. X. Fu, J. Zhang, Z. Ding, et al. Stacking-dependent electronic structure of bilayer silicene. Appl. Phys. Lett. 104, 131904, 2014.